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The Role of Strain in New Semiconductor Devices
Author(s) -
Dommann Alex,
Neels Antonia
Publication year - 2009
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.200800343
Subject(s) - materials science , pmos logic , reciprocal lattice , semiconductor , scattering , strain (injury) , optoelectronics , lattice (music) , layer (electronics) , composite material , transistor , condensed matter physics , optics , electrical engineering , diffraction , acoustics , physics , medicine , engineering , voltage
HRXRD is a very sensitive and non destructive technique to determine the strain in thin layer materials such as electron guides or the strain induces by the second order package of SOCs. In reciprocal space mapping (RSM), it is possible to separate the elastic component of the scattered intensity from the diffuse one. As a consequence, it is possible to study diffuse scattering due to defects of the crystal lattice. As an example we show also RSM's of a high‐speed SiGe pMOS structure.