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Fundamentals of Metal‐induced Crystallization of Amorphous Semiconductors
Author(s) -
Wang Zumin,
Jeurgens Lars P. H.,
Wang Jiang Y.,
Mittemeijer Eric J.
Publication year - 2009
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.200800340
Subject(s) - crystallization , amorphous solid , materials science , amorphous semiconductors , amorphous metal , semiconductor , nanotechnology , thermodynamics , thin film , optoelectronics , crystallography , chemistry , physics
A general, quantitative model has been developed that provides fundamental understanding of the metal‐induced crystallization (MIC) of amorphous semiconductors. Interface thermodynamics has been shown to play a decisive role for the whether or not occurrence of MIC. The model has been employed to predict the MIC temperature for various metal/amorphous‐semiconductor systems. A consequence of the model is the prediction that the thickness of an ultrathin, pure Al film put on the top of an amorphous Si layer can be used as a very accurate tool to tune the crystallization temperature of amorphous Si. These theoretical predictions have been confirmed experimentally. The fundamental understanding reached may lead to pronounced technological progress in the low‐temperature manufacturing of crystalline‐Si‐based devices deposited on cheap and flexible substrates such as glasses, plastics, and possibly even papers.