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New Materials in Memory Development Sub 50 nm: Trends in Flash and DRAM
Author(s) -
Kuesters Karl Heinz,
Beug Marc Florian,
Schroeder Uwe,
Nagel Nicolas,
Bewersdorff Ulrike,
Dallmann Gerald,
Jakschik Stefan,
Knoefler Roman,
Kudelka Stephan,
Ludwig Christoph,
Manger Dirk,
Mueller Wolfgang,
Tilke Armin
Publication year - 2009
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.200800298
Subject(s) - dram , materials science , flash (photography) , flash memory , focus (optics) , universal memory , key (lock) , nanotechnology , engineering physics , optoelectronics , computer memory , computer science , semiconductor memory , embedded system , memory refresh , computer hardware , engineering , operating system , optics , physics
New materials are of key importance for scaling memories in the sub 50 nm generations. Currently high‐ k materials and metal gates are investigated for usage in Flash and DRAM memory. However, the requirements in the applications are different, leading to different material combinations. This paper gives an overview on new materials with focus on memory applications.