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Nonvolatile Memory Concepts Based on Resistive Switching in Inorganic Materials
Author(s) -
Mikolajick Thomas,
Salinga Martin,
Kund Michael,
Kever Thorsten
Publication year - 2009
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.200800294
Subject(s) - resistive random access memory , materials science , resistive touchscreen , nanotechnology , solid state , non volatile memory , engineering physics , scaling , charge (physics) , electrical engineering , optoelectronics , engineering , voltage , physics , geometry , mathematics , quantum mechanics
Solid state memories play an important role for the electronic systems used in today's information society. The classical approach of charge storage is expected to reach its physical scaling limits very soon. New storage effects are therefore receiving significant interest from industry and academia. In the paper we summarize recent results on resistive switching effects in inorganic materials obtained in the research groups of the authors. We discuss the implications of these results for the suitability of the investigated material systems as well as for the direction of further research.