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Dewetting of an Organic Semiconductor Thin Film Observed in Real‐time
Author(s) -
Kowarik Stefan,
Gerlach Alexander,
Sellner Stefan,
Cavalcanti Leide,
Schreiber Frank
Publication year - 2009
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.200800289
Subject(s) - dewetting , materials science , monolayer , bilayer , silicon , semiconductor , thin film , diffusion , organic semiconductor , nanotechnology , oxide , silicon oxide , analytical chemistry (journal) , optoelectronics , metallurgy , membrane , chemistry , chromatography , thermodynamics , biochemistry , physics , silicon nitride
We study the growth and the post‐growth dewetting process of the organic semiconductor diindenoperylene (DIP) using real‐time X‐ray reflectivity measurements. We show that a DIP monolayer deposited in UHV onto silicon oxide dewets via the formation of bilayer islands. From the time resolved structural data we estimate the rate constant for interlayer diffusion of DIP molecules. Post‐growth AFM measurements confirm the conclusions from the X‐ray data and show the morphology of the dewetted film.