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Dislocations as Active Components in Novel Silicon Devices
Author(s) -
Kittler Martin,
Reiche Manfred
Publication year - 2009
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.200800283
Subject(s) - dislocation , materials science , wafer , electric field , optoelectronics , silicon , condensed matter physics , composite material , physics , quantum mechanics
The electrical and optical properties of dislocations in Si are reviewed, namely dislocation‐related recombination and luminescence, transport of minority and majority carriers along dislocations or the electric field around dislocations. It is shown that Si wafer direct bonding allows well‐controlled formation of dislocation networks, giving rise to adjustable dislocation properties. Ideas for novel Si devices utilizing dislocations as active components are presented. In particular, dislocation‐based light emitters at about 1.5 µ m wavelength are demonstrated. Concepts for dislocation‐based conductive channels and fast FETs, manipulators of biomolecules or thermo‐electric generators are sketched.