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Relationship between Condition of Deposition and Properties of W‐Ti‐N Thin Films Prepared by Reactive Magnetron Sputtering
Author(s) -
Kuchuk A. V.,
Kladko V. P.,
Lytvyn O. S.,
Piotrowska A.,
Minikayev R. A.,
Ratajczak R.
Publication year - 2006
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.200500263
Subject(s) - materials science , thin film , sputter deposition , deposition (geology) , electrical resistivity and conductivity , cavity magnetron , nitride , sputtering , partial pressure , phase (matter) , morphology (biology) , nitrogen , metallurgy , composite material , analytical chemistry (journal) , nanotechnology , layer (electronics) , oxygen , biology , paleontology , chemistry , engineering , chromatography , sediment , electrical engineering , genetics , physics , organic chemistry , quantum mechanics
A correlation between the film properties of nitrides, oxides etc., and their structure, is of fundamental importance – not only for thin solid films physics but also for practical applications. The structure of the films depends on deposition methods and their parameters. The relationship between properties (chemical and phase compositions, surface morphology, and electrical resistivity) and nitrogen partial pressure of reactive magnetron sputtered W‐Ti‐N thin films has been discussed here in detail.