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Electrochemical Interface Doping in Organic Light Emitting Field Effect Transistors
Author(s) -
Hepp A.,
Heil H.,
Schmechel R.,
von Seggern H.
Publication year - 2005
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.200500118
Subject(s) - materials science , optoelectronics , tetracene , doping , transistor , field effect transistor , active layer , organic field effect transistor , lithium (medication) , layer (electronics) , nanotechnology , voltage , molecule , thin film transistor , electrical engineering , chemistry , organic chemistry , engineering , medicine , endocrinology
Electrochemical interface doping is introduced as a new concept for the realization of organic light‐emitting field‐effect transistors (O‐LEFTs). In a bottom contact tetracene transistor a 2–4 nm poly(ethylene‐oxide) layer with lithium triflate was inserted as interface layer between the gate‐oxide and the tetracene layer. For the first time a polymeric electrolyte is combined with “small molecule” functional material. The injection of both, holes and electrons allows for radiative recombination in the transistor channel. The onset of light emission occurs at a source‐drain‐voltage below 10 V and can be controlled by the gate voltage.