SiC/Si 3 N 4  Nano‐Composites: Crystallization Kinetics of Precursor‐derived Amorphous Ceramic Solids of Type Si‐C‐N | Zendy

Schmidt H. | Zendy; Borchardt G. | Zendy

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SiC/Si 3 N 4 Nano‐Composites: Crystallization Kinetics of Precursor‐derived Amorphous Ceramic Solids of Type Si‐C‐N

Author(s) -

Schmidt H.,

Borchardt G.

Publication year - 2005

Publication title -

advanced engineering materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.938

H-Index - 114

eISSN - 1527-2648

pISSN - 1438-1656

DOI - 10.1002/adem.200500016

Subject(s) - crystallization , materials science , nucleation , amorphous solid , annealing (glass) , ceramic , arrhenius equation , kinetics , enthalpy , activation energy , chemical engineering , composite material , crystallography , thermodynamics , chemistry , physics , quantum mechanics , engineering

The crystallization kinetics of precursor‐derived amorphous Si‐C‐N ceramics is investigated by X‐ray diffractometry. Annealing leads to crystallization where composites of nano‐crystalline SiC and micro‐crystalline Si 3 N 4 are formed. Both crystalline phases are developed during a simultaneous diffusion controlled nucleation and growth process. The rate constants of crystallization obey an Arrhenius behaviour with a very high activation enthalpy, which is the reason for a relatively uniform temperature stability of the amorphous state.

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