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Biaxial Fracture Test of Silicon Wafers
Author(s) -
Funke C.,
Kullig E.,
Kuna M.,
Möller H.J.
Publication year - 2004
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.200400406
Subject(s) - wafer , materials science , weibull distribution , fracture (geology) , finite element method , silicon , bending , composite material , stress (linguistics) , forensic engineering , structural engineering , metallurgy , nanotechnology , engineering , mathematics , linguistics , statistics , philosophy
The statistical fracture stress distribution of silicon wafers was obtained by biaxial plate bending tests in combination with finite element calculations. For the correct interpretation of these tests it is important that the finite element calculations imply wafer thickness and elastic properties of the multicrystalline silicon wafer, otherwise the resulting stresses will be estimated to high. The Weibull distribution of fracture stresses yields different parameters for each test series of silicon, depending on the surface preparation and wafer manufacturing condition.