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Thickness Dependent Loss Function of Si with 0.14 eV Energy Resolution
Author(s) -
StögerPollach M.,
Hebert C.,
Zandbergen H.W.,
Schattschneider P.
Publication year - 2004
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.200400085
Subject(s) - materials science , resolution (logic) , spectral line , transmission electron microscopy , electron energy loss spectroscopy , electron , electron microscope , band gap , high resolution transmission electron microscopy , atomic physics , analytical chemistry (journal) , high resolution , molecular physics , optics , optoelectronics , nanotechnology , physics , chemistry , remote sensing , chromatography , quantum mechanics , astronomy , artificial intelligence , geology , computer science
Si band gap spectra were recorded by using electron energy loss spectrometry with very high energy resolution of 0.14 eV using a transmission electron microscope with a monochromated electron source. The shape of the spectra change with thickness, becoming indistinct at very thin regions. But even for higher thicknesses structureal evolution of the spectra can be observed. A comparison with band structure calculations is given, too.