Thickness Dependent Loss Function of Si with 0.14 eV Energy Resolution | Zendy

StögerPollach M. | Zendy; Hebert C. | Zendy; Zandbergen H.W. | Zendy; Schattschneider P. | Zendy

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Thickness Dependent Loss Function of Si with 0.14 eV Energy Resolution

Author(s) -

StögerPollach M.,

Hebert C.,

Zandbergen H.W.,

Schattschneider P.

Publication year - 2004

Publication title -

advanced engineering materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.938

H-Index - 114

eISSN - 1527-2648

pISSN - 1438-1656

DOI - 10.1002/adem.200400085

Subject(s) - materials science , resolution (logic) , spectral line , transmission electron microscopy , electron energy loss spectroscopy , electron , electron microscope , band gap , high resolution transmission electron microscopy , atomic physics , analytical chemistry (journal) , high resolution , molecular physics , optics , optoelectronics , nanotechnology , physics , chemistry , remote sensing , chromatography , quantum mechanics , astronomy , artificial intelligence , geology , computer science

Si band gap spectra were recorded by using electron energy loss spectrometry with very high energy resolution of 0.14 eV using a transmission electron microscope with a monochromated electron source. The shape of the spectra change with thickness, becoming indistinct at very thin regions. But even for higher thicknesses structureal evolution of the spectra can be observed. A comparison with band structure calculations is given, too.

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