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Investigation of the Correlation between Texture and Microstructure on a Submicrometer Scale in the TEM
Author(s) -
Zaefferer S.
Publication year - 2003
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/adem.200300382
Subject(s) - microstructure , materials science , electron backscatter diffraction , nucleation , nanocrystalline material , texture (cosmology) , diffraction , recrystallization (geology) , transmission electron microscopy , dislocation , tungsten , crystallography , optics , metallurgy , composite material , nanotechnology , physics , computer science , artificial intelligence , paleontology , biology , image (mathematics) , thermodynamics , chemistry
In recent years the investigation of local texture and microstructure by analysis of electron backscatter diffraction patterns (EBSP) in the SEM has become a very powerful and popular method. With the introduction of SEM with field emission guns (FEG) the spatial resolution of EBSP measurements could be enhanced from 500 nm with a tungsten emitter to better than 50 nm. This evolution of SEM techniques raises the question whether transmission electron microscopy (TEM) still has fields of application in texture research. The present article answers this question with a clear “yes” and presents three examples of investigations where TEM is indispensable. The three examples comprise the investigation of the correlation between dislocation structure and deformation texture, a study on nucleation mechanisms of recrystallization in highly deformed metals and the investigation of microtexture and microstructure in nanocrystalline materials. Together with the presentation of these cases some of the necessary measurement techniques are described briefly. It is shown that TEM has to be applied when highest spatial resolution of orientation determination and imaging and high accuracy of orientation determination are to be reached, when the three‐dimensional and quantitative characterization of lattice defects is required or when materials with a high density of lattice defects are to be investigated.