Open AccessMOSFET‐clamped three‐level converters without flying capacitor
Author(s) -
Yao Zhilei,
Zhang Yubo,
Hu Xuefeng
Publication year - 2020
Publication title -
international transactions on electrical energy systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.428
H-Index - 42
ISSN - 2050-7038
DOI - 10.1002/2050-7038.12218
Subject(s) - converters , mosfet , capacitor , electrical engineering , electronic engineering , computer science , engineering , voltage , transistor
Summary Output voltage of renewable energy resources varies widely when environment and load change widely. Therefore, diode‐clamped three‐level isolated DC‐DC converters are adopted to operate in wide input‐voltage range application. However, the conduction loss of the diodes at three‐level units is high in high power or low input‐voltage application. Moreover, the flying capacitor should be used to achieve voltage balance for switches. In order to solve the abovementioned problems, MOSFET‐clamped three‐level DC‐DC converters without flying capacitor are proposed. Diodes in three‐level units are substituted by MOSFETs; thus, the conduction loss is reduced. Moreover, one extra control degree of freedom exists in three‐level units based on MOSFETs, so the flying capacitor can be removed. Derivation of the MOSFET‐clamped push‐pull forward three‐level converter is illustrated. Operating principle is illustrated. Design guidelines and example are given. Simulation and experimental results of the MOSFET‐clamped push‐pull forward three‐level converter without flying capacitor confirm the theoretical analysis. Finally, topology extension of MOSFET‐clamped three‐level converters is given.