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In‐Situ Compositional and Structural Analysis of Plastic Solar Cells
Author(s) -
van Duren J.K.J.,
Loos J.,
Morrissey F.,
Leewis C.M.,
Kivits K.P.H.,
van IJzendoorn L.J.,
Rispens M.T.,
Hummelen J.C.,
Janssen R.A.J.
Publication year - 2002
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/1616-3028(20021016)12:10<665::aid-adfm665>3.0.co;2-j
Subject(s) - materials science , pedot:pss , photoactive layer , indium tin oxide , indium , rutherford backscattering spectrometry , polymer solar cell , chemical engineering , transmission electron microscopy , cathode , styrene , organic solar cell , secondary ion mass spectrometry , heterojunction , active layer , layer (electronics) , polymer , optoelectronics , solar cell , ion , nanotechnology , composite material , copolymer , thin film , organic chemistry , chemistry , thin film transistor , engineering
Bulk‐heterojunction photovoltaic cells consisting of a photoactive layer of poly[2‐methoxy‐5‐(3′,7′‐dimethyloctyloxy)‐1,4‐phenylenevinylene] (MDMO‐PPV) and a C 60 derivative, (1‐(3‐methoxycarbonyl)propyl‐1‐phenyl‐[6,6]‐methanofullerene), (PCBM), sandwiched between an indium tin oxide (ITO) anode covered with poly(ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), and an aluminum cathode have been analyzed using transmission electron microscopy (TEM) and cryogenic Rutherford backscattering spectrometry (RBS) to assess the structural and elemental composition of these devices. TEM of cross sections of fully processed photovoltaic cells, prepared using a focused ion beam, provide a clear view of the individual layers and their interfaces. RBS shows that during preparation diffusion of indium into the PEDOT:PSS occurs while the diffusion of aluminum into the polymer layers is negligible. An iodinated C 60 derivative (I‐PCBM) was used to determine the concentration profile of this derivative in the vertical direction of a 100 nm active layer.