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Silsesquioxane Resins as High‐Performance Solution Processible Dielectric Materials for Organic Transistor Applications
Author(s) -
Bao Z.,
Kuck V.,
Rogers J.A.,
Paczkowski M.A.
Publication year - 2002
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/1616-3028(20020805)12:8<526::aid-adfm526>3.0.co;2-s
Subject(s) - materials science , silsesquioxane , dielectric , organic electronics , chemical mechanical planarization , organic field effect transistor , transistor , polymer , organic semiconductor , curing (chemistry) , layer (electronics) , nanotechnology , electronics , printed electronics , optoelectronics , field effect transistor , composite material , inkwell , electrical engineering , voltage , engineering
Silsesquioxane polymers have been successfully used as the dielectric layer in organic field‐effect transistors (FETs) deposited on robust, plastic substrates. Performance comparable to that found with silicon substrates having SiO 2 as the active dielectric layer was observed with six p‐ and n‐ channel organic semiconductors. These organopolysiloxane materials can be deposited using conventional liquid coating technologies and are compatible with non‐photolithographic microcontact printing. Their low curing temperature permits the use of a variety of low‐cost plastic materials as substrates in FET devices. These findings have facilitated the realization of low‐cost, large area plastic electronics.