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Emeraldine Base Polyaniline as an Alternative to Poly(3,4‐ethylenedioxythiophene) as a Hole‐Transporting Layer
Author(s) -
Higgins R. W. T.,
Zaidi N. A.,
Monkman A. P.
Publication year - 2001
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/1616-3028(200112)11:6<407::aid-adfm407>3.0.co;2-0
Subject(s) - polyaniline , protonation , materials science , polystyrene , conductive polymer , polymer chemistry , polyaniline nanofibers , bilayer , chemical engineering , polymer , organic chemistry , polymerization , composite material , chemistry , membrane , ion , biochemistry , engineering
The device physics of bilayer polymer light emitting diodes containing either poly[2‐methoxy‐5‐(2‐ethylhexyloxy)‐1,4‐phenylenevinylene] or ladder‐type methyl‐poly( p ‐phenylene) active layers have been determined. The active layer was consistent in thickness and general preparation whilst hole transporting layers spin cast from emeraldine base polyaniline protonated with camphorsulfonic acid, emeraldine base polyaniline protonated with 2‐acrylamido‐2‐methyl‐1‐propanesulfonic acid, and emeraldine base polyaniline protonated with polystyrene sulfonated acid, in various ratios of polyaniline to counter ion, were used in order to determine how various spin‐processible polyaniline layers performed relative to a commercially available polystyrene sulfonated acid doped poly(3,4‐ethylenedioxythiophene layer. For poly[2‐methoxy‐5‐(2‐ethylhexyloxy)‐1,4‐phenylenevinylene] light‐emitting diodes we observe an improvement in performance when using emeraldine base polyaniline protonated with polystyrene sulfonated acid relative to poly(3,4‐ethylenedioxythiophene protonated with polystyrene sulfonated acid, with a maximum device external quantum efficiency of 0.6362 % at a current density of 20.18 mA/cm 2 .