Premium
An Efficient Chemical Solution Deposition Method for Epitaxial Gallium Nitride Layers Using a Single‐Molecule Precursor
Author(s) -
Parala H.,
Devi A.,
Wohlfart A.,
Winter M.,
Fischer R. A.
Publication year - 2001
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/1616-3028(200106)11:3<224::aid-adfm224>3.0.co;2-4
Subject(s) - materials science , epitaxy , x ray photoelectron spectroscopy , gallium nitride , gallium , photoluminescence , reciprocal lattice , scanning electron microscope , microstructure , analytical chemistry (journal) , diffraction , crystallography , optoelectronics , chemical engineering , nanotechnology , layer (electronics) , optics , composite material , chemistry , organic chemistry , engineering , metallurgy , physics
An efficient chemical solution deposition (CSD) approach to growing epitaxial GaN layers at relatively low temperatures using a single‐molecule precursor (SMP) is described. The precursor employed was bisazido diethylaminopropyl gallium, which exists as a dimer in the solid state and decomposes at relatively low temperatures. Using this precursor, epitaxial GaN layers were grown and characterized for their morphology, microstructure, and composition by X‐ray diffraction (XRD), X‐ray rocking curve (XRC) analysis, pole figure measurements, reciprocal space mappings, scanning electron microscopy (SEM), Rutherford backscattering (RBS), X‐ray photoelectron spectroscopy (XPS), and room temperature photoluminescence (PL) measurements.