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Electrical and Structural Properties of Oxygen‐Containing Silicon Annealed at 670–720 K Under High Stress
Author(s) -
Kudla A.,
Misiuk A.,
Panas A.,
BakMisiuk J.
Publication year - 2002
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/1527-2648(20020806)4:8<600::aid-adem600>3.0.co;2-5
Subject(s) - materials science , silicon , oxygen , annealing (glass) , stress (linguistics) , thermal , czochralski method , engineering physics , metallurgy , composite material , optoelectronics , thermodynamics , chemistry , linguistics , philosophy , physics , organic chemistry , engineering
The effect of oxygen‐related structural defects on generation of thermal donors in Czochralski grown silicon (Cz‐Si) was investigated by the authors. The results presented here confirm the stress‐stimulated enhancement of creation of thermal donors.