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Investigations of a New Nanostructured Si‐Material by Spectral Response and Electron Paramagnetic Resonance
Author(s) -
Kuznicki Z.T.,
Ley M.,
Turek P.,
Bernard M.
Publication year - 2002
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/1527-2648(20020806)4:8<577::aid-adem577>3.0.co;2-r
Subject(s) - substructure , electron paramagnetic resonance , materials science , paramagnetism , silicon , nanostructure , resonance (particle physics) , ion , electron , condensed matter physics , nuclear magnetic resonance , nanotechnology , atomic physics , optoelectronics , chemistry , physics , structural engineering , organic chemistry , quantum mechanics , engineering
Electron spin resonance (or electron paramagnetic resonance) was applied to analyze multi‐interface solar cells with an active amorphized substructure inserted in the emitter. The nanostructure was realized by P ion implantation followed by an adequate thermal treatment to yield very sharp a‐Si/c‐Si heterointerfaces. The authors have investigated especially the substructure and the transition zones between the two Si phases, which is particularly interesting because of the stress induced by the density difference of the two Si phases.