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Spectroscopic Signatures of the Alloy–Alloy Interface in InGaAs–GaAs(001) Stepped Quantum Wells: a Frequency‐ and Time‐Resolved Study
Author(s) -
FernándezAlonso F.,
Righini M.,
Selci S.,
D’Andrea A.,
Schiumarini D.,
Tomassini N.
Publication year - 2002
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/1527-2648(20020806)4:8<574::aid-adem574>3.0.co;2-2
Subject(s) - alloy , quantum well , materials science , photoluminescence , exciton , ultrashort pulse , condensed matter physics , optoelectronics , optics , metallurgy , physics , laser
Stepped quantum wells of InGaAs–GaAs(001) have been characterized by energy‐ and time‐resolved (ultrafast) optical spectroscopies. The energy‐resolved reflectivity spectra are in good agreement with our theoretical predictions while energy‐ and time‐resolved photoluminescence measurements show a rather different behavior with respect to what we observe for symmetric quantum wells of similar structural characteristics and growth history. The data suggest that potential alloy fluctuations at the InGaAs–GaAs induce exciton localization.