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Modelling of Residual Stress Development in Electronic Materials and Devices
Author(s) -
Krawietz R.,
Bobeth M.,
Pompe W.,
Wersing W.,
Winkler B.
Publication year - 2002
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/1527-2648(20020806)4:8<565::aid-adem565>3.0.co;2-2
Subject(s) - residual stress , materials science , raman spectroscopy , microelectronics , thin film , substrate (aquarium) , stress (linguistics) , silicon , ferroelectricity , spectroscopy , composite material , optoelectronics , optics , nanotechnology , dielectric , linguistics , oceanography , physics , philosophy , quantum mechanics , geology
Residual stresses in laterally structured thin films for microelectronic applications cause local stress concentrations in the substrate material near the film edges. Spatially resolved measurements of these stress concentrations with a resolution of about 1 micron are possible by means of optical spectroscopy. In the case of silicon Raman spectroscopy is applied. Raman spectroscopy has been used to analyse the stress state near edges of sputtered pyrosensor structures, in particular near the edges of Pt thin films, serving as bottom electrode, and near the edges of ferroelectric PZT films. The measured stress profile revealed that both the Pt and the PZT film are under tension.