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Raman Mapping Devoted to the Phase Transformation and Strain Analysis in Si Micro‐Indentation
Author(s) -
Demangeot F.,
Puech P.,
Domnich V.,
Gogotsi Y.G.,
Pinel S.,
Pizani P.S.,
Jasinevicius R.G.
Publication year - 2002
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/1527-2648(20020806)4:8<543::aid-adem543>3.0.co;2-i
Subject(s) - materials science , raman spectroscopy , strain (injury) , indentation , phonon , phase (matter) , transformation (genetics) , composite material , optics , condensed matter physics , chemistry , medicine , physics , organic chemistry , biochemistry , gene
Using Raman mapping to obtain relevant information on strain and distribution of various Si phases around micro and nano‐indentations has several advantages, as is shown by the authors of this paper. Strain is obtained through phonon shift, while the high‐pressure Si phases are identified by their signatures at respective wavenumbers.