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Nanoclusters – Building Blocks for Future Nanoelectronic Devices?
Author(s) -
Schmid G.
Publication year - 2001
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/1527-2648(200110)3:10<737::aid-adem737>3.0.co;2-8
Subject(s) - nanoclusters , nanoelectronics , materials science , cluster (spacecraft) , monolayer , nanotechnology , transistor , quantum , nanometre , quantum dot , optoelectronics , engineering physics , voltage , physics , computer science , quantum mechanics , composite material , programming language
Ligand stabilized metal nanoclusters in the size range of 1–2 nanometers exhibit well pronounced quantum size behaviour, even at room temperature. This is due to the development of discrete energy levels in those metal particles which are reduced in size to quasi zero‐dimensionality. Quantum mechanically they can be considered as big atoms. Studies of the current‐voltage (I‐U) characteristics identified these clusters as single electron transistors and herewith as highly promising candidates as building blocks in future nanoelectronics. As a condition, the clusters – here it is especially Au 55 (PPh 3 ) 12 Cl 6 – have to be organized in two and one dimensions. Procedures have been developed to generate well ordered cluster monolayers by self assembling. Quasi one‐dimensional cluster wires became available by degradation of monolayers by means of modified Langmuir‐Blodgett techniques. Very first electrical investigations of short cluster wires indicate them as quantum mechanically determined units.