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Glasses for High‐Resistivity Thick‐Film Resistors
Author(s) -
Weißmann R.,
Chong W.
Publication year - 2000
Publication title -
advanced engineering materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.938
H-Index - 114
eISSN - 1527-2648
pISSN - 1438-1656
DOI - 10.1002/1527-2648(200006)2:6<359::aid-adem359>3.0.co;2-c
Subject(s) - materials science , resistor , electrical resistivity and conductivity , microstructure , composite material , temperature coefficient , oxide , conductor , conductivity , voltage , metallurgy , electrical engineering , chemistry , engineering
Knowledge about the role of the glass matrix in thick‐film resistors is necessary for improvement of their electrical properties for use in high‐performance components. The influence of glass composition on the microstructure of ruthenate conductor and resistor parameters has been studied. Additions of TiO 2 , GeO 2 , and TeO 2 , which in dilute concentrations markedly increase the resistivity, improve the temperature coefficient of the resistance and the voltage stability. The oxide enrichment of the glass film between the conducting particles reduces the ruthenium‐ion solubility and decreases the tunneling conductivity between the conductor grains.

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