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Polymer Gate Dielectrics and Conducting‐Polymer Contactsfor High‐Performance Organic Thin‐Film Transistors
Author(s) -
Halik M.,
Klauk H.,
Zschieschang U.,
Schmid G.,
Radlik W.,
Weber W.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(20021203)14:23<1717::aid-adma1717>3.0.co;2-g
Subject(s) - materials science , pentacene , thin film transistor , transistor , polymer , optoelectronics , gate dielectric , dielectric , thin film , organic semiconductor , electronic circuit , nanotechnology , composite material , electrical engineering , layer (electronics) , voltage , engineering
Organic thin‐film transistors and circuits have been fabricated on glass and on flexible substrates, achieving carrier mobilities of 0.3 cm 2 V –1 s –1 on glass. In particular, the authors investigate how the substitution of inorganic gate dielectrics and metals with solution‐processed polymers affects the performance of the transistors. Two pentacene inverters on glass are shown in the Figure (see also cover).