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Synthesis and Nanostructuring of Patterned Wires of α‐GeO 2 by Thermal Oxidation
Author(s) -
Hu J.Q.,
Li Q.,
Meng X.M.,
Lee C.S.,
Lee S.T.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(20021002)14:19<1396::aid-adma1396>3.0.co;2-u
Subject(s) - nanowire , materials science , thermal oxidation , nanotechnology , thermal , metal , morphology (biology) , optoelectronics , layer (electronics) , metallurgy , physics , meteorology , biology , genetics
Thermal oxidation of metallic Ge yields patterned nanowires of α‐GeO 2 . A significant proportion (∼50 %) of the nanowires possess a common wire morphology with a uniform structure, while some of them have distinctive patterned structures consisting of either a regular array of Ge dots or penetrating holes along their axial directions (see Figure), the so‐called dot‐patterned nanowires and hole‐patterned nanowires, respectively.