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Organic Field‐Effect Transistors Made of Epitaxially Grown Crystals of a Thiophene/Phenylene Co‐oligomer
Author(s) -
Ichikawa M.,
Yanagi H.,
Shimizu Y.,
Hotta S.,
Suganuma N.,
Koyama T.,
Taniguchi Y.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(20020916)14:18<1272::aid-adma1272>3.0.co;2-f
Subject(s) - materials science , oligomer , phenylene , thiophene , epitaxy , field effect transistor , transistor , optoelectronics , condensed matter physics , nanotechnology , polymer chemistry , organic chemistry , polymer , composite material , electrical engineering , chemistry , engineering , layer (electronics) , voltage , physics
Organic field‐effect transistors (FETs) based on epitaxially grown crystals of a thiophene/phenylene co‐oligomer (see Figure and cover) are described. The FETs exhibit good operation characteristics, and the epitaxial needle‐like crystals display good charge transport properties along the needle axis. The maximum hole mobility of 0.66 cm 2 V –1 s –1 is close to that of vapor phase grown oligothiophene single crystals.