Premium
Spin‐Driven Resistance in Organic‐Based Magnetic Semiconductor V[TCNE] x
Author(s) -
Prigodin V.N.,
Raju N.P.,
Pokhodnya K.I.,
Miller J.S.,
Epstein A.J.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(20020903)14:17<1230::aid-adma1230>3.0.co;2-5
Subject(s) - ferrimagnetism , spins , materials science , condensed matter physics , schematic , spin (aerodynamics) , semiconductor , organic semiconductor , magnetic semiconductor , valence (chemistry) , vanadium , spin polarization , electron , magnetic field , magnetization , optoelectronics , physics , thermodynamics , quantum mechanics , electronic engineering , engineering , metallurgy
The existence of spin polarized sub‐bands , a half‐semiconducting state in which the electron spins in “valence” and “conduction” bands are oppositely polarized, has been derived for the vanadium‐organyl‐based “soft” ferrimagnet V(TCNE) x by measurements of its electrical and magnetic resistance at different temperatures. The Figure shows a schematic of a level diagram for the system investigated.