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Red and Green Light Emission From Samarium‐Doped Amorphous Aluminum Nitride Films
Author(s) -
Ribeiro C.T.M.,
Alvarez F.,
Zanatta A.R.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(20020816)14:16<1154::aid-adma1154>3.0.co;2-g
Subject(s) - materials science , luminescence , samarium , amorphous solid , doping , nitride , green light , ion , optoelectronics , photoluminescence , excitation , aluminium , analytical chemistry (journal) , blue light , nanotechnology , inorganic chemistry , metallurgy , crystallography , chemistry , physics , engineering , layer (electronics) , quantum mechanics , chromatography , electrical engineering
Visible light emission from Sm‐doped amorphous AlN films has been achieved at room temperature, through excitation with 488.0 nm photons. The experimental results point to the coexistence of Sm 3+ and Sm 2+ ions (see Figure), which gives rise to well‐defined and relatively strong luminescence at ∼550 nm and ∼650 nm. The influence of thermal treatment on the Sm‐related luminescence of the AlN films is also examined.