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Uniform Boron Nitride Coatings on Silicon Carbide Nanowires
Author(s) -
Tang C.C.,
Bando Y.,
Sato T.,
Kurashima K.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(20020805)14:15<1046::aid-adma1046>3.0.co;2-h
Subject(s) - materials science , nanowire , boron nitride , vapor–liquid–solid method , silicon carbide , semiconductor , nanotechnology , boron , silicon , boron oxide , carbide , chemical engineering , chemical vapor deposition , nitride , oxide , metallurgy , optoelectronics , layer (electronics) , organic chemistry , chemistry , engineering
Uniform and smooth BN coatings on SiC nanowires have been obtained by a simple vapor–liquid–solid (VLS) process using Ni as catalyst. SiO and B 2 O 2 gases, simultaneously generated by heating boron and silicon oxide at high temperature, are used as precursors for the VLS growth. The BN‐coated semiconductor nanowires could be useful for a wide range of electronic applications.