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Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method
Author(s) -
Kim H.M.,
Kim D.S.,
Park Y.S.,
Kim D.Y.,
Kang T.W.,
Chung K.S.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(20020705)14:13/14<991::aid-adma991>3.0.co;2-l
Subject(s) - nanorod , materials science , hydride , epitaxy , rod , sapphire , vapor phase , substrate (aquarium) , optoelectronics , phase (matter) , crystal (programming language) , chemical engineering , nanotechnology , optics , metal , metallurgy , organic chemistry , laser , chemistry , alternative medicine , oceanography , pathology , computer science , programming language , medicine , geology , engineering , layer (electronics) , thermodynamics , physics
Straight and well‐aligned GaN nanorods have been obtained by horizontal hydride vapor phase epitaxy (HVPE) at a relatively low temperature (∼ 480 °C). This catalyst‐ and template‐ independent method involves the controllable growth of GaN nanorods on a sapphire substrate, with the rods preferentially oriented along the crystal c ‐axis. The Figure shows a cross‐sectional SEM image of the GaN nanorods.