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Fast Spectral Hole Burning in Sm 2+ ‐Doped Al 2 O 3 –SiO 2 Glasses
Author(s) -
Nogami M.,
Suzuki K.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(20020618)14:12<923::aid-adma923>3.0.co;2-d
Subject(s) - materials science , samarium , doping , spectral hole burning , irradiation , ion , oxygen , silica glass , analytical chemistry (journal) , chemical engineering , photochemistry , inorganic chemistry , optoelectronics , optics , composite material , laser , organic chemistry , physics , engineering , chemistry , nuclear physics
High‐speed persistent spectral hole burning (PSHB) , 30 times faster than in a similar H 2 gas treated glass, has been achieved for a samarium( II )‐doped alumina–silica glass upon irradiation with X‐rays. Glasses of this type, enabling fast and highly efficient hole burning, are excellent candidates for binary high‐density memory devices. Hole burning probably proceeds by a novel mechanism, i.e., the reaction of the X‐ray irradiation‐generated Sm 2+ ions with oxygen ions to re‐establish the original, stable trivalent oxidation state of samarium.