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Tuning Electronic Properties of Semiconductors by Adsorption of [60]Fullerene Carboxylic Acid Derivatives
Author(s) -
Bonifazi D.,
Salomon A.,
Enger O.,
Diederich F.,
Cahen D.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(20020605)14:11<802::aid-adma802>3.0.co;2-#
Subject(s) - materials science , fullerene , adsorption , semiconductor , carboxylic acid , chemical engineering , organic semiconductor , organic chemistry , nanotechnology , inorganic chemistry , polymer chemistry , optoelectronics , chemistry , engineering
Changing the electronic surface properties of GaAs and ZnO can be achieved by chemisorption of partial monolayers of C 60 derivatives. This effect appears to depend on the way the C 60 moiety is coupled to the semiconductor surface (see Figure), as shown by preliminary I – V investigations of (n‐GaAs C 60 derivative)/Au solid‐state diodes.