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A Silicon Nanowire with a Coulomb Blockade Effect at Room Temperature
Author(s) -
Hu S.F.,
Wong W.Z.,
Liu S.S.,
Wu Y.C.,
Sung C.L.,
Huang T.Y.,
Yang T.J.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(20020517)14:10<736::aid-adma736>3.0.co;2-9
Subject(s) - coulomb blockade , materials science , silicon on insulator , silicon nanowires , wafer , silicon , optoelectronics , nanowire , transistor , quantum wire , electron , nanotechnology , electrical engineering , voltage , physics , engineering , quantum mechanics
An extremely narrow and thin silicon wire has been fabricated on a silicon‐on‐insulator wafer (see Figure). The room‐temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single‐electron transistors.