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Hole Conduction along Molecular Wires: σ‐Bonded Silicon Versus π‐Bond‐Conjugated Carbon
Author(s) -
Grozema F.C.,
Siebbeles L.D.A.,
Warman J.M.,
Seki S.,
Tagawa S.,
Scherf U.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(20020205)14:3<228::aid-adma228>3.0.co;2-3
Subject(s) - conjugated system , materials science , silicon , carbon fibers , molecular wire , chemical physics , carbon chain , polymer , optoelectronics , molecule , organic chemistry , composite material , chemistry , composite number
Hole transport along isolated chains of two types of molecular wire —σ‐bonded silicon and π‐bond‐conjugated carbon—are studied in this article. It is shown that mobilities well in excess of 0.1 cm 2 /V s are achievable for both types of wire, with disorder in the backbone playing a decisive role in determining the magnitude of the mobility. It is concluded that values in excess of 1 cm 2 /V s should be realizable (even at room temperature) if the disorder can be reduced by either chemical or physical means.