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Ferroelectric Properties of Porous Silicon
Author(s) -
Chen Q.,
Li X.,
Zhang Y.,
Qian Y.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(20020116)14:2<134::aid-adma134>3.0.co;2-j
Subject(s) - materials science , ferroelectricity , silicon , porous silicon , porosity , optoelectronics , nanotechnology , composite material , dielectric
Silicon‐compatible ferroelectric random access memory (RAM) has come a step closer with the synthesis of porous silicon that exhibits ferroelectric properties despite its centrosymmetric crystal structure. The Figure shows the image of an iron‐passivated porous silicon sample under a polarizing optical microscope, revealing the domain structure and the silicon pillars in the inner part of the domains.