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Emission Gain‐Narrowing from Melt‐Recrystallized Organic Semiconductors
Author(s) -
Hibino R.,
Nagawa M.,
Hotta S.,
Ichikawa M.,
Koyama T.,
Taniguchi Y.
Publication year - 2002
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(20020116)14:2<119::aid-adma119>3.0.co;2-7
Subject(s) - materials science , amplified spontaneous emission , organic semiconductor , recrystallization (geology) , optoelectronics , thiophene , semiconductor , laser , stimulated emission , irradiation , substrate (aquarium) , optics , organic chemistry , paleontology , chemistry , physics , oceanography , nuclear physics , biology , geology
Recrystallization from the melt, performed directly on‐substrate , allows the exploitation of the amplified spontaneous emission (ASE) properties of oligo‐phenylene/‐thienylene organic semiconductors in a superior manner (see Figure for a micrograph of the thiophene BP1T on quartz). Upon laser irradiation, a gain‐narrowing of one or more emission lines is observed, partially due to molecular alignment in the recrystallized phase.