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Gallium Complexes in Three‐Layer Organic Electroluminescent Devices
Author(s) -
Elschner A.,
Heuer H. W.,
Jonas F.,
Kirchmeyer S.,
Wehrmann R.,
Wussow K.
Publication year - 2001
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(200112)13:23<1811::aid-adma1811>3.0.co;2-g
Subject(s) - electroluminescence , materials science , layer (electronics) , oled , fluorescence , spin coating , optoelectronics , doping , gallium , photochemistry , light emitting diode , aluminium , photoluminescence , analytical chemistry (journal) , thin film , nanotechnology , optics , organic chemistry , chemistry , physics , metallurgy
Organic light‐emitting diodes fabricated by subsequently spin‐coating two layers—a hole‐transporting followed by a metal chelate emissive layer—onto poly(3,4‐ethylenedioxythiophene)/poly(styrenesulfonate) are presented for the first time. The electron–hole recombination occurs in a layer consisting of Ga complexes (see Figure), which exhibit high fluorescence quantum yields, and their emission spectra are blue‐shifted relative to that of tris(8‐hydroxyquinoline) aluminum. By doping this spin‐coated emission layer with fluorescent emitters the emission band can be shifted within the visible spectral range.