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Bicrystalline Silicon Nanowires
Author(s) -
Carim A. H.,
Lew K.K.,
Redwing J. M.
Publication year - 2001
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(200110)13:19<1489::aid-adma1489>3.0.co;2-e
Subject(s) - materials science , nanowire , template , silicon , nanotechnology , silicon nanowires , cover (algebra) , crystallography , optoelectronics , mechanical engineering , chemistry , engineering
The synthesis of bicrystalline silicon nanowires containing a single (111) twin boundary along the entire length of the growth axis (see Figure and also cover) is revealed here. The wires are generally straight and contain no other defects. These unusual structures offer model systems for the study of charge and mass transport along single defects and could serve as templates for novel device structures.