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Luminescent Erbium‐Doped Porous Silicon Bilayer Structures
Author(s) -
Gu L.,
Xiong Z.,
Chen G.,
Xiao Z.,
Gong D.,
Hou X.,
Wang X.
Publication year - 2001
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(200109)13:18<1402::aid-adma1402>3.0.co;2-u
Subject(s) - materials science , bilayer , erbium , luminescence , doping , porous silicon , silicon , optoelectronics , etching (microfabrication) , epitaxy , excitation , nanotechnology , membrane , layer (electronics) , engineering , electrical engineering , genetics , biology
A novel method for preparing luminescent erbium‐doped porous silicon (PSi) is presented. By anodic etching of an Er and O co‐doped Si single crystalline film grown by molecular beam epitaxy, an Er‐doped PSi/PSi bilayer structure is formed. The advantages of such a bilayer structure are efficient excitation of Er ions and suppression of energy back transfer for the de‐excitation process. The Figure is an SEM image of a PSi:Er sample.