Premium
Gd 5 (Si x Ge 1– x ) 4 : An Extremum Material
Author(s) -
Pecharsky V. K.,
Gschneidner K. A.
Publication year - 2001
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(200105)13:9<683::aid-adma683>3.0.co;2-o
Subject(s) - materials science , magnetic refrigeration , magnetostriction , condensed matter physics , colossal magnetoresistance , martensite , giant magnetoresistance , magnetic field , magnetic shape memory alloy , magnetoresistance , magnetization , metallurgy , microstructure , magnetic domain , physics , quantum mechanics
The large shear displacements of atomic layers in Gd 5 (Si x Ge 1– x ) 4 materials, coupled with the change of crystallographic symmetry and magnetic order, characterizes these transformations as magnetic–martensitic, which are extremely rare. The start and the end of the magnetic–martensitic transitions depends strongly on the direction of change (i.e., increasing or decreasing) of either or both the temperature and magnetic field. These profound bonding, structural, electronic, and magnetic changes, which occur in the Gd 5 (Si x Ge 1– x ) 4 system, bring about some extreme changes of the materials' behavior resulting in a rich variety of unusually powerful magneto‐responsive properties, such as the giant magnetocaloric effect, colossal magnetostriction, and giant magnetoresistance.