Premium
Nanoparticles as the Active Element of High‐Temperature Metal–Insulator– Silicon Carbide Gas Sensors
Author(s) -
Böhme O.,
Spetz A. Lloyd,
Lundström I.,
Schmeißer D.
Publication year - 2001
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(200104)13:8<597::aid-adma597>3.0.co;2-c
Subject(s) - materials science , schottky diode , silicon carbide , nanoparticle , insulator (electricity) , optoelectronics , diode , capacitor , silicon on insulator , dipole , nanotechnology , schottky barrier , silicon , electrical engineering , composite material , voltage , chemistry , engineering , organic chemistry
The sensor performance of MISiC (metal–insulator–silicon carbide) diode devices depends on their temperature pretreatment: an activation step at 600 °C leads to fast‐responding devices with extraordinarily high signals but the devices fail when operated above 700 °C. The authors focus on the key role of nanoparticles in high‐temperature gas sensor applications of these MISiC devices, presenting a model in which the interface dipole moment of nanoparticles is seen as the driving force and explaining the difference in response of capacitor‐configuration and Schottky‐diode‐configuration devices.