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Melting and Welding Semiconductor Nanowires in Nanotubes
Author(s) -
Wu Y.,
Yang P.
Publication year - 2001
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(200104)13:7<520::aid-adma520>3.0.co;2-w
Subject(s) - materials science , nanowire , welding , semiconductor , carbon nanotube , recrystallization (geology) , nanotechnology , hysteresis , melting point depression , nanostructure , melting point , optoelectronics , composite material , condensed matter physics , paleontology , physics , biology
Significant melting point depression and large hysteresis during the melting–recrystallization cycle are observed for semiconductor Ge nanowires encapsulated within carbon nanotubes. The capability of cutting, linking (see cover), and welding (see Figure) nanowires at relatively modest temperatures may provide a new approach to integrating these 1D nanostructures into functional devices and circuitry.