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A Novel Single‐Component Negative Resist for DUV and Electron Beam Lithography
Author(s) -
Wu H.,
Gonsalves K. E.
Publication year - 2001
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(200102)13:3<195::aid-adma195>3.0.co;2-a
Subject(s) - resist , materials science , electron beam lithography , lithography , extreme ultraviolet lithography , sulfonium , cathode ray , x ray lithography , optics , next generation lithography , stencil lithography , optoelectronics , polymer , radiation , electron , nanotechnology , chemistry , composite material , physics , layer (electronics) , salt (chemistry) , quantum mechanics
Alternatives to chemically amplified (CA) resists have generally suffered in the past from lower sensitivity to the light used in lithography. The sulfonium group‐containing polymer reported here is shown to exhibit high sensitivity to both deep ultraviolet and electron beam radiation. The Figure shows a negative tone pattern with feature dimensions of ca. 250 nm.