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Solvothermal Reduction Synthesis of InSb Nanocrystals
Author(s) -
Li Y.,
Wang Z.,
Duan X.,
Zhang G.,
Wang C.
Publication year - 2001
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(200101)13:2<145::aid-adma145>3.0.co;2-y
Subject(s) - materials science , indium antimonide , antimonide , band gap , optoelectronics , indium , semiconductor , electron mobility , nanotechnology , nanocrystal
Group III–V compound semiconductors are used widely in electronic and optoelectronic applications. Of this group of materials, indium antimonide is particularly well suited for use in high‐speed devices as it has a small bandgap and the largest room‐temperature carrier mobility. Here, a new method for the synthesis of InSb (and related GaSb) is presented that sidesteps many of the problems of current methods, for example, high temperatures, air stability, or general complexity.