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Sol‐Gel‐Derived Mesoporous Silica Films with Low Dielectric Constants
Author(s) -
Seraji S.,
Wu Y.,
Forbess M.,
Limmer S. J.,
Chou T.,
Cao G. Z.
Publication year - 2000
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(200011)12:22<1695::aid-adma1695>3.0.co;2-v
Subject(s) - materials science , dielectric , porosity , sol gel , mesoporous silica , composite material , mesoporous material , adhesion , electrode , humidity , metal , chemical engineering , nanotechnology , optoelectronics , metallurgy , organic chemistry , chemistry , catalysis , physics , engineering , thermodynamics
Mesoporous silica films with low dielectric constants and possibly closed pores have been achieved with a multiple step sol‐gel processing technique. Crack‐free films with approximately 50 % porosity and 0.9 μm thicknesses were obtained, a tape‐test revealing good adhesion between films and substrates or metal electrodes. Dielectric constants remained virtually unchanged after aging at room temperature at 56 % humidity over 6 days.