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Combinatorial Generation and Analysis of Nanometer‐ and Micrometer‐Scale Silicon Features via “Dip‐Pen” Nanolithography and Wet Chemical Etching
Author(s) -
Weinberger D. A.,
Hong S.,
Mirkin C. A.,
Wessels B. W.,
Higgins T. B.
Publication year - 2000
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(200011)12:21<1600::aid-adma1600>3.0.co;2-6
Subject(s) - materials science , nanometre , nanolithography , micrometer , nanotechnology , etching (microfabrication) , dip pen nanolithography , silicon , isotropic etching , scale (ratio) , optoelectronics , fabrication , optics , composite material , medicine , alternative medicine , physics , pathology , layer (electronics) , quantum mechanics
In dip‐pen nanolithography, molecules are “written” onto substrates using an atomic force microscope tip. It is shown here that nanostructures generated using this technique can be used as resists for generating three‐dimensional multilayered solid‐state structures such as that shown in the Figure (a Au/Ti/Si trilayer nanoscale pillar) via wet chemical etching (see also cover).