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Oriented Silicon Carbide Nanowires: Synthesis and Field Emission Properties
Author(s) -
Pan Z.,
Lai H.L.,
Au F. C. K.,
Duan X.,
Zhou W.,
Shi W.,
Wang N.,
Lee C.S.,
Wong N.B.,
Lee S.T.,
Xie S.
Publication year - 2000
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(200008)12:16<1186::aid-adma1186>3.0.co;2-f
Subject(s) - materials science , field electron emission , nanowire , silicon carbide , whiskers , microelectronics , nanotechnology , silicon , carbon nanotube , composite material , optoelectronics , electron , physics , quantum mechanics
Arrays of oriented silicon carbide (SiC) nanowires are synthesized by reacting stable carbon nanotubes—which act as both template and reagent—with SiO. Field emission measurements on the nanowires indicate that the arrays are excellent field emitters, technologically useful field emission current densities being produced at very low electric fields. The results suggest that the oriented nanowires may have potential uses in vacuum microelectronic devices in addition to more conventional applications as strengthening in composites (replacing SiC whiskers, which have lower elasticity and strength).