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Mobility in Polycrystalline Oligothiophene Field‐Effect Transistors Dependent on Grain Size
Author(s) -
Horowitz G.,
Hajlaoui M. E.
Publication year - 2000
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/1521-4095(200007)12:14<1046::aid-adma1046>3.0.co;2-w
Subject(s) - materials science , grain size , organic semiconductor , field effect transistor , crystallite , transistor , thin film transistor , semiconductor , organic field effect transistor , optoelectronics , electron mobility , nanotechnology , composite material , metallurgy , electrical engineering , voltage , layer (electronics) , engineering
Organic field‐effect transistors (OFETs) provide an excellent means to study transport phenomena in organic semiconductors. These authors have prepared a series of vacuum‐evaporated films of sexithiophene and octithiophene (see Figure) with various grain size. Charge mobility, which increases with grain size, was found to be dependent on temperature in small grains, but practically temperature‐independent in large‐grain films.