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Electrical Resistivity and Thermally Stimulated Current in CuIn 5 Se 8
Author(s) -
Hernández E.,
Durán L.,
Durante Rincón C. A.,
Aranguren G.,
Guerrero C.,
Naranjo J.
Publication year - 2002
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/1521-4079(200211)37:11<1227::aid-crat1227>3.0.co;2-h
Subject(s) - indium , electrical resistivity and conductivity , materials science , copper , absorption (acoustics) , activation energy , band gap , current (fluid) , analytical chemistry (journal) , optoelectronics , chemistry , metallurgy , electrical engineering , composite material , physics , thermodynamics , chromatography , engineering
From electrical resistivity measurements in the range from 240 to 450 K and from optical absorption measurements the energy gap value of CuIn 5 Se 8 has been found to be 1.13 eV. Thermally stimulated current and electrical measurements at high temperature performed in indium annealed samples show deep levels at 0.55 and 0.79 eV, respectively. These defects are expected to be associated with interstitial indium or indium in copper site because of the In‐rich condition.